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80025 AX593 SXQ50 2SB1568 20L45CT 1B23A10 MC14468 2SC47
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  Datasheet File OCR Text:
 LAB
MECHANICAL DATA Dimensions in mm
10.2 1.3 4.5
SEME
BUL76B
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Designed for use in electronic ballast applications
6.3
3.6 Dia.
15.1
18.0
123
1.3 14.0
0.85
* * * *
0.5
SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE HIGH CURRENT EFFICIENT POWER SWITCHING
FEATURES
* Multi-base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. * Ion implant and high accuracy masking for tight control of characteristics from batch to batch. * Triple Guard Rings for improved control of high voltages.
2.54 2.54
TO-220
Pin 1 - Base Pin 2 - Collector Pin 3 - Emitter
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
VCBO VCEO VEBO IC IB Ptot Tj Tstg Semelab plc. Collector - Base Voltage(IE=0) Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage (IC = 0) Continuous Collector Current Base Current Total Dissipation at Tcase = 25C Junction Temperature Operating and Storage Temperature Range
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
250V 100V 10V 70A 14A 85W 150C -55 to +150C
Prelim. 2/97
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated)
Parameter
VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO
SEME
BUL76B
Test Conditions
Min.
100 250 10
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS Collector - Emitter Sustaining Voltage IC = 100mA Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector - Base Cut-Off Current Collector - Emitter Cut-Off Current Emitter Cut-Off Current IC = 1mA IE = 1mA VCB = 240V TC = 125C VCE = 90V VEB = 9V TC = 125C IC = 1A VCE = 1V VCE = 1V VCE = 5V VCE = 5V IB = 1A IB = 2A IB = 4A IB = 1A IB = 2A VCE = 4V f = 1MHz
V 10 100 100 10 100
A A A
45 25 50 40
90 60 80 70 0.5 0.8 0.7 1.2 1.5 20 200 V V --
hFE*
DC Current Gain
IC = 15A IC = 10A IC = 18A IC = 10A
VCE(sat)*
Collector - Emitter Saturation Voltage IC = 20A IC = 20A IC = 10A IC = 20A IC = 0.2A VCB = 10V
VBE(sat)*
Base - Emitter Saturation Voltage DYNAMIC CHARACTERISTICS Transition Frequency Output Capacitance
ft Cob
MHz pF
* Pulse test tp = 300s , < 2%
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/97


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